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Transistors
2SC4627J
Silicon NPN epitaxial planar type
1.60+0.05 -0.03 1.000.05
0.800.05
For high-frequency amplification Features
* Optimum for RF amplification of FM/AM radios * High transition frequency fT * SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
Unit: mm
0.12+0.03 -0.01
3
1.600.05
0.85+0.05 -0.03
1 0.270.02
2
(0.50)(0.50)
0 to 0.02
(0.80)
5
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 3 15 125 125 -55 to +125 Unit V V V mA mW C C
0.70+0.05 -0.03
5
1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package
Marking Symbol: U
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Emitter-base voltage (Collector open) Base-emitter voltage Forward current transfer ratio * Transition frequency Reverse transfer capacitance (Common emitter) Power gain Noise figure Symbol VCBO VEBO VBE hFE fT Cre GP NF Conditions IC = 10 A, IE = 0 IE = 10 A, IC = 0 VCB = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA VCB = 6 V, IE = -1 mA, f = 200 MHz VCB = 6 V, IE = -1 mA, f = 10.7 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz VCB = 6 V, IE = -1 mA, f = 100 MHz 65 450 650 0.8 24 3.3 1.0 Min 30 3 720 160 Typ Max Unit V V mV MHz pF dB dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE C 65 to 160
0.10 max.
(0.375)
Publication date: March 2003
SJC00163AED
1
2SC4627J
PC Ta
150
12
IC VCE
Ta = 25C IB = 100 A
12
VCE = 6 V Ta = 25C
IC I B
Collector power dissipation PC (mW)
125
10
10
Collector current IC (mA)
100
8
80 A
Collector current IC (mA)
8
75
6
60 A 40 A
6
50
4
4
25
2
20 A
2
0
0
0
40
80
120
160
0
4
8
12
16
0
0
30
60
90
120
150
180
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Base current IB (A)
IC VBE
Collector-emitter saturation voltage VCE(sat) (V)
60
VCE = 6 V
VCE(sat) IC
10 IC / IB = 10
120 100 Ta = 75C
25C -25C
hFE IC
VCE = 6 V
50
1
Forward current transfer ratio hFE
100
Collector current IC (mA)
40
25C Ta = 75C -25C
80
25C 0.1
Ta = 75C -25C
30
60
20
40
0.01
10
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001 0.1
1
10
0
1
10
100
1 000
Base-emitter voltage VBE (V)
Collector current IC (mA)
Collector current IC (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
3.0 f = 1 MHz IE = 0 Ta = 25C
2.5
2.0
1.5
1.0
0.5
0
1
10
100
Collector-base voltage VCB (V)
2
SJC00163AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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